Factory Lead Time  

15 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Weight  

2.084002g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

61A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

140W Tc

Turn Off Delay Time  

28 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 100μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2012

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

140W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

13.9m Ω @ 37A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3180pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

87nC @ 10V

Rise Time  

32ns

Vgs (Max)  

±20V

Fall Time (Typ)  

28 ns

Continuous Drain Current (ID)  

61A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

250A

Nominal Vgs  

3 V

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free